CRG60T60AN3H CRG50T65AK5HD Original Insulated Gate Bipolar Transistor IGBT Module CRG40T60AK3HD CRMICRO
Description
Introducing the CRG60T60AN3H CRG50T65AK5HD Original Insulated Gate Bipolar Transistor IGBT Modul — designed for superior performance and reliability. Ideal for ups applications, ensuring versatile functionality across various settings. Sourced directly from China, ensuring competitive pricing and quality assurance for bulk orders.
Key Attributes
Model Number: CRG60T60AN3H / CRG50T65AK5HD / CRG40T60AK3HD
Type: Bipolar Transistor
Brand Name: original
Package Type: Throught Hole
Description: Insulated Gate Bipolar
Place of Origin: China
Package / Case: TO-247
Series: 60T60 / 50T65 / 40T60
D/C: newest
Application: UPS
Supplier Type: retailer
Media Available: Photo, datasheet
Voltage - Collector Emitter Breakdown (max): -
Vce Saturation (Max) @ Ib, Ic: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Mounting Type: Throught Hole
Resistor - Base (R1): -
Resistor - Emitter Base (R2): -
FET Type: Bipolar
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Frequency: -
Current Rating (Amps): -
Noise Figure: -
Power - Output: -
Voltage - Rated: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs (Max): -
IGBT Type: Insulated Gate Bipolar
Configuration: Single Switch
Vce(on) (Max) @ Vge, Ic: -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Voltage - Breakdown (V(BR)GSS): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Resistance - RDS(On): -
Voltage - Output: -
Voltage - Offset (Vt): -
Current - Gate to Anode Leakage (Igao): -
Current - Valley (Iv): -
Current - Peak: -
Transistor Type: Insulated Gate Bipolar
Selling Units: Single item
Single package size: XX cm
CRG60T60AN3H CRG50T65AK5HD Original Insulated Gate Bipolar Transistor IGBT Module CRG40T60AK3HD CRMICRO
MRP: On Request
Min.order: 10 Units
Supplier:Shenzhen Huilicheng Electronic Technology Co., Ltd.Verified
Imports to India:Yes
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Description
Introducing the CRG60T60AN3H CRG50T65AK5HD Original Insulated Gate Bipolar Transistor IGBT Modul — designed for superior performance and reliability. Ideal for ups applications, ensuring versatile functionality across various settings. Sourced directly from China, ensuring competitive pricing and quality assurance for bulk orders.
Key Attributes
Model Number: CRG60T60AN3H / CRG50T65AK5HD / CRG40T60AK3HD
Type: Bipolar Transistor
Brand Name: original
Package Type: Throught Hole
Description: Insulated Gate Bipolar
Place of Origin: China
Package / Case: TO-247
Series: 60T60 / 50T65 / 40T60
D/C: newest
Application: UPS
Supplier Type: retailer
Media Available: Photo, datasheet
Voltage - Collector Emitter Breakdown (max): -
Vce Saturation (Max) @ Ib, Ic: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Mounting Type: Throught Hole
Resistor - Base (R1): -
Resistor - Emitter Base (R2): -
FET Type: Bipolar
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Frequency: -
Current Rating (Amps): -
Noise Figure: -
Power - Output: -
Voltage - Rated: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs (Max): -
IGBT Type: Insulated Gate Bipolar
Configuration: Single Switch
Vce(on) (Max) @ Vge, Ic: -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Voltage - Breakdown (V(BR)GSS): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Resistance - RDS(On): -
Voltage - Output: -
Voltage - Offset (Vt): -
Current - Gate to Anode Leakage (Igao): -
Current - Valley (Iv): -
Current - Peak: -
Transistor Type: Insulated Gate Bipolar
Selling Units: Single item
Single package size: XX cm